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| 1MBC03-120,1MB03D-120, 1200V / 3A Molded Package Features * Small molded package * Low power loss * Soft switching with low switching surge and noise * High reliability, high ruggedness (RBSOA, SCSOA etc.) * Comprehensive line-up Molded IGBT Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) 1MBC03-120 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg Rating 1200 20 5 2.5 15 70 +150 -40 to +150 40 Unit V V A A A W C C N*m Equivalent Circuit Schematic IGBT C:Collector G:Gate E:Emitter 1MB03D-120 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 1200 20 5 2.5 15 70 40 +150 -40 to +150 40 Unit V V A A A W W C C N*m IGBT + FWD C:Collector G:Gate E:Emitter 1MBC03-120, 1MB03D-120 Electrical characteristics (at Tj=25C unless otherwise specified) 1MBC03-120 / IGBT Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Characteristics Min. Typ. - - 5.5 - - - - - - - - - - - - 400 70 20 - - - - Conditions Max. 1.0 20 8.5 3.5 - - - 1.2 0.6 1.5 0.5 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=2.5mA VGE=15V, IC=2.5A VGE=0V VCE=10V f=1MHz VCC=600V IC=2.5A VGE=15V RG=430 ohm (Half Bridge) Molded IGBT Unit mA A V V pF s 1MB03D-120 / IGBT+FWD Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. - - 5.5 - - - - - - - - - - - - - - 400 70 20 - - - - - - Conditions Max. 1.0 20 8.5 3.5 - - - 1.2 0.6 1.5 0.5 3.0 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=2.5mA VGE=15V, IC=2.5A VGE=0V VCE=10V f=1MHz VCC=600V, IC=2.5A VGE=15V RG=430 ohm (Half Bridge) IF=2.5A, VGE=0V IF=2.5A, VGE=-10V, di/dt=100A/s mA A V V pF Unit s V s Thermal resistance characteristics 1MBC03-120 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. - - Conditions Max. 1.78 IGBT C/W Unit 1MB03D-120 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. - - - - Conditions Max. 1.78 3.12 IGBT FWD C/W C/W Unit Outline drawings, mm 1MBC03-120 TO-110AB 1MB03D-120 TO-3P 1MBC03-120, 1MB03D-120 Characteristics 1MBC03-120,1MB03D-120 Collector current vs. Collector-Emitter voltage Tj=25C 5 5 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125C 4 Collector current : Ic [A] Collector current : Ic [A] 4 3 3 2 2 1 1 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C 10 10 Collector-Emitter vs. Gate-Emitter voltage Tj=125C Collector-Emitter voltage : VCE [V] 8 Collector-Emitter voltage : VCE [V] 8 6 6 4 4 2 2 0 0 5 10 15 20 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=430 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=600V, RG=430 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 0 1 2 3 4 5 Collector current : Ic [A] 10 0 1 2 3 Collector current : Ic [A] 4 5 1MBC03-120, 1MB03D-120 Characteristics 1MBC03-120,1MB03D-120 Switching time vs. RG Vcc=600V, Ic=2.5A, VGE=15V, Tj=25C IGBT Module Switching time vs. RG Vcc=600V, Ic=2.5A, VGE=15V, Tj=125C Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 Gate resistance : RG [ohm] 1000 100 100 Gate resistance : RG [ohm] 1000 Dynamic input characteristics 1000 Capacitance vs. Collector-Emitter voltage 25 Tj=25C Tj=25C Collector-Emitter voltage : VCE [V] 600 15 Gate-Emitter voltage : VGE [V] Capacitance : Cies, Coes, Cres [nF] 800 20 1000 100 400 10 10 200 5 0 0 20 40 Gate charge : Qg [nC] 60 0 1 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Reversed biased safe operating area < +VGE=15V, -VGE = 15V, Tj < 125C, RG > 430 ohm = = 6 200 Typical short circuit capability Vcc=800V, RG=430 ohm, Tj=125C 80 5 Short circuit time current : Isc [A] 150 60 Collector current : Ic [A] 4 3 100 40 2 50 20 1 0 0 0 0 200 400 600 800 1000 1200 5 10 Collector-Emitter voltage : VCE [V] 15 Gate voltage : VGE [V] 20 25 Short circuit time : tsc [s] 1MBC03-120, 1MB03D-120 Characteristics 1MBC03-120,1MB03D-120 Transient thermal resistance IGBT Module Thermal resistance : Rth (j-c) [C/W] 101 100 10-1 10-2 10-4 10-3 10-2 Pulse width : PW [sec.] 10-1 100 1MB03D-120 Reverse recovery time vs. Forward current -di/dt=7.5A / sec 800 2.5 Reverse recovery current vs. Forward current -di/dt=7.5A / sec 2.0 600 reverse recovery time : trr [nsec] reverse recovery current : Irr [A] 1.5 400 1.0 200 0.5 0 0 1 2 3 4 5 Forward current : IF [A] 0 0 1 2 3 4 5 Forward current : IF [A] Forward current vs. Foeward voltage 700 5 Reverse recovery time characteristics vs. -di/dt IF=2.5A, Tj=125C 3.5 600 4 3.0 500 reverse recovery time : trr [nsec] 2.5 3 400 2.0 Forward current : IF [A] 300 1.5 2 200 1.0 1 100 0.5 0 0 0 1.0 2.0 3.0 4.0 0 5 10 15 -di/dt 20 [ A / sec ] 25 30 Forward voltage : VF [V] 0 reverse recovery current : Irr [A] |
Price & Availability of 1MBC03-120
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